VBsemi Elec 80N02-VB TO252

VBsemi Elec · FETs & Power MOSFETs · MPN 80N02-VB TO252

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)26nC@4.5V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation71W
RDS(on)4.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)375pF
Input Capacitance(Ciss)3.66nF
TypeN-Channel

Technical details

N-Channel 20V 100A 71W Surface Mount TO-252

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