VBsemi Elec 50N06-VB TO263

VBsemi Elec · FETs & Power MOSFETs · MPN 50N06-VB TO263

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)47nC@10V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation136W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)225pF
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

N-Channel 60V 75A 136W Surface Mount TO-263(D2Pak)

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