VBsemi Elec · FETs & Power MOSFETs · MPN 4N04H2-VB TO263
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 650pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 312W |
| RDS(on) | 1.7mΩ@10V;2.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
N-Channel 40V 150A 312W Surface Mount TO-263(D2PAK)