VBsemi Elec 4813NHG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 4813NHG-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
RDS(on)7mΩ@10V;9mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)370pF
Number1 N-channel
Input Capacitance(Ciss)2.201nF
TypeN-Channel

Technical details

N-Channel 30V 70A 100W Surface Mount TO-252

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