VBsemi Elec 2SK601-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SK601-VB

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Specifications

Gate Charge(Qg)5.2nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)102mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)196pF
TypeN-Channel

Technical details

N-Channel 100V 3.2A 1.25W Surface Mount SOT-89

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