VBsemi Elec 2SK525-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SK525-VB

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)64nC@10V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation42W
RDS(on)58mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)130pF
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 200V 20A 42W Through Hole TO-220F

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