VBsemi Elec 2SK3326-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SK3326-VB

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)81nC@10V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)660mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.91nF
TypeN-Channel

Technical details

N-Channel 500V 13A 250W Through Hole TO-220AB

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