VBsemi Elec 2SK3127-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SK3127-VB

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Specifications

Gate Charge(Qg)171nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)68.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)970pF
Input Capacitance(Ciss)1.4nF
TypeN-Channel

Technical details

N-Channel 30V 68.8A 250W Through Hole TO-220F

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