VBsemi Elec 2SK215-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SK215-VB

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)290pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.75W
RDS(on)33mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)190pF
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 150V 50A 3.75W Through Hole TO-220AB

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