VBsemi Elec · FETs & Power MOSFETs · MPN 2SK2135-VB
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 110mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
200V 30A 3V 125W 110mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS