VBsemi Elec 2SK1335-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SK1335-VB

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)270mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 200V 8A 96W Through Hole TO-251

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