VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ687-ZK-E1-AY-VB
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| Output Capacitance(Coss) | 1.565nF |
|---|---|
| Pd - Power Dissipation | 127W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 160nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 715pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.3nF |
127W 30V 1V 11mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS