VBsemi Elec 2SJ635.-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ635.-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)26nC
Current - Continuous Drain(Id)25A
Output Capacitance(Coss)130pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)62mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)90pF
Input Capacitance(Ciss)1.71nF
TypeP-Channel

Technical details

P-Channel 60V 25A Through Hole TO-251

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