VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ625-T1B-A-VB
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 60mΩ@10V;65mΩ@4.5V;80mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| Input Capacitance(Ciss) | 835pF |
| Type | P-Channel |
P-Channel 20V 4A 2.5W Surface Mount SOT-23