VBsemi Elec 2SJ598-Z-E1-AZ-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ598-Z-E1-AZ-VB

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)61mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1nF
TypeP-Channel

Technical details

P-Channel 60V 30A Surface Mount TO-252

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