VBsemi Elec 2SJ506STR-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ506STR-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation25W
RDS(on)33mΩ@10V;46mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)190pF
Input Capacitance(Ciss)1.35nF
TypeP-Channel

Technical details

P-Channel 30V 38A 25W Surface Mount TO-252

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