VBsemi Elec 2SJ439.-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ439.-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)43nC@10V
Output Capacitance(Coss)205pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
RDS(on)72mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)140pF
Input Capacitance(Ciss)1.15nF
TypeP-Channel

Technical details

P-Channel 30V 20A 20W Through Hole TO-251

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