VBsemi Elec 2SJ420-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ420-VB

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Specifications

Gate Charge(Qg)165nC@5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
RDS(on)10mΩ@1.8V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 12V 16A 1.5W Surface Mount SO-8

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