VBsemi Elec 2SJ380-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ380-VB

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)230mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.055nF
TypeP-Channel

Technical details

P-Channel 100V 12A 2.5W Through Hole TO-220F

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