VBsemi Elec 2SJ361-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ361-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25nC@10V;13nC@4.5V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)7.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation6.5W
RDS(on)50mΩ@10V;56mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)145pF
Number1 P-Channel
Input Capacitance(Ciss)1.395nF
TypeP-Channel

Technical details

P-Channel 30V 7.6A 6.5W Surface Mount SOT-89

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