VBsemi Elec 2SJ348-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ348-VB

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Specifications

Gate Charge(Qg)60nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)390pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation104.2W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)26mΩ@4.5V
Input Capacitance(Ciss)3.7nF
TypeP-Channel

Technical details

P-Channel 60V 50A 104.2W Through Hole TO-220AB

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