VBsemi Elec 2SJ275-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ275-VB

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50.7W
RDS(on)220mΩ@10V;240mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)280pF
Input Capacitance(Ciss)2.765nF
TypeP-Channel

Technical details

P-Channel 100V 12A 50.7W Surface Mount TO-263(D2PAK)

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