VBsemi Elec 2SJ213-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ213-VB

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Specifications

Gate Charge(Qg)13.2nC@6V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)51pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation6.5W
RDS(on)230mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number1 P-Channel
Input Capacitance(Ciss)819pF
TypeP-Channel

Technical details

P-Channel 100V 3A 6.5W Surface Mount SOT-89

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