VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ211-VB
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| Gate Charge(Qg) | 7.7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 1.5A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 850mW |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 500mΩ@10V;560mΩ@6V |
| Input Capacitance(Ciss) | 520pF |
| Type | P-Channel |
P-Channel 100V 1.5A 850mW Surface Mount SOT-23(TO-236)