VBsemi Elec 2SJ195-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ195-VB

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)8.8A
Output Capacitance(Coss)65pF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
RDS(on)280mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.055nF
TypeP-Channel

Technical details

P-Channel 100V 8.8A 2.5W Surface Mount TO-252

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