VBsemi Elec 2SJ185-T1B-A-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ185-T1B-A-VB

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Specifications

Gate Charge(Qg)2nC@15V
Drain to Source Voltage60V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation460mW
RDS(on)3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 P-Channel
Input Capacitance(Ciss)23pF
TypeP-Channel

Technical details

P-Channel 60V 500mA 460mW Surface Mount SOT-23(TO-236)

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