VBsemi Elec 2SJ133-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2SJ133-VB

No reviews yet — be the first to review VBsemi Elec 2SJ133-VB.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
RDS(on)61mΩ@10V;72mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)100pF
Input Capacitance(Ciss)1nF
TypeP-Channel

Technical details

P-Channel 60V 30A Surface Mount TO-252

Related FETs & Power MOSFETs