VBsemi Elec 2N7002WT1G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 2N7002WT1G-VB

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Specifications

Gate Charge(Qg)400pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)30pF
TypeN-Channel

Technical details

N-Channel 60V 300mA 350mW Surface Mount SC70-3

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