VBsemi Elec 2N65-VB TO220

VBsemi Elec · FETs & Power MOSFETs · MPN 2N65-VB TO220

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)11nC@10V
Current - Continuous Drain(Id)2A
Output Capacitance(Coss)45pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)417pF
TypeN-Channel

Technical details

N-Channel 650V 2A 45W Through Hole TO-220AB

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