VBsemi Elec · FETs & Power MOSFETs · MPN 20P02J-VB
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| Gate Charge(Qg) | 27nC@10V;19nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 205pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V;2.5V |
| Pd - Power Dissipation | 20W |
| RDS(on) | 56mΩ@10V;72mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Input Capacitance(Ciss) | 1.15nF |
| Type | P-Channel |
P-Channel 30V 20A 20W Through Hole TO-251