VBsemi Elec · FETs & Power MOSFETs · MPN 200N03-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 14.5nC@10V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 8.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 16mΩ@10V;20mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 660pF |
| Type | N-Channel |
MOSFET N-Channel 30V 8.5A 3.1W Surface Mount SO-8