VBsemi Elec 18N20GP-HF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 18N20GP-HF-VB

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation126W
RDS(on)110mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)80pF
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 200V 30A 126W Through Hole TO-220AB

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