VBsemi Elec 135N08N-VB TO252

VBsemi Elec · FETs & Power MOSFETs · MPN 135N08N-VB TO252

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Specifications

Gate Charge(Qg)35.5nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)75A
Output Capacitance(Coss)950pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.855nF
TypeN-Channel

Technical details

N-Channel 80V 75A 62.5W Surface Mount TO-252

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