VBsemi Elec 070N10NS3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN 070N10NS3-VB

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)11.2pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF
TypeN-Channel

Technical details

N-Channel 100V 95A 100W Surface Mount DFN5x6-8

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