UTC · FETs & Power MOSFETs · MPN UTT6NP10G-S08-R
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| Gate Charge(Qg) | 95nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 155mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 530pF;1.4nF |
| Type | N-Channel + P-Channel |
100V 3.2A 1V 2W 155mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS