UTC · FETs & Power MOSFETs · MPN UT3N10G-AE3-R
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| Gate Charge(Qg) | 20nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 165mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 720pF |
| Type | N-Channel |
N-Channel 100V 3A 0.35W Surface Mount SOT-23