UTC UT3N06G-AE3-R

UTC · FETs & Power MOSFETs · MPN UT3N06G-AE3-R

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Specifications

Gate Charge(Qg)6nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)490pF
TypeN-Channel

Technical details

N-Channel 60V 3A 350mW Surface Mount SOT-23

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