UTC UT3415G-AE3-R

UTC · FETs & Power MOSFETs · MPN UT3415G-AE3-R

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)200pF
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation700mW
RDS(on)105mΩ@1.5V
Reverse Transfer Capacitance (Crss@Vds)170pF
Number1 P-Channel
Input Capacitance(Ciss)1nF
TypeP-Channel

Technical details

P-Channel 20V 4A 0.7W Surface Mount SOT-23

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