UTC UT2316G-AE3-R

UTC · FETs & Power MOSFETs · MPN UT2316G-AE3-R

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)3.6A
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation960mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)215pF
TypeN-Channel

Technical details

N-Channel 30V 3.6A 960mW Surface Mount SOT-23

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