UTC UF640L-TN3-R

UTC · FETs & Power MOSFETs · MPN UF640L-TN3-R

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Specifications

Gate Charge(Qg)89nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)805pF
TypeN-Channel

Technical details

N-Channel 200V 18A 83W Surface Mount TO-252

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