UTC UF640L-TA3-T

UTC · FETs & Power MOSFETs · MPN UF640L-TA3-T

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage200V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation123W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)805pF
TypeN-Channel

Technical details

200V 18A 4V 123W 180mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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