UTC HE8550G-D-AB3-R

UTC · Transistors (BJTs) · MPN HE8550G-D-AB3-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)190MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain160
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 1.5A 190MHz 1W Surface Mount SOT-89

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