UTC · FETs & Power MOSFETs · MPN 5N65L-TN3-R
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 72pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
650V 5A 4V 2.4Ω@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS