UTC 4NM80G-TN3-R

UTC · FETs & Power MOSFETs · MPN 4NM80G-TN3-R

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)43nC@50V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation22W
RDS(on)2.52Ω@10V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)250pF
TypeN-Channel

Technical details

N-Channel 800V 4A 22W Surface Mount TO-252

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