UTC 4N80G-TF3-T

UTC · FETs & Power MOSFETs · MPN 4N80G-TF3-T

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)880pF

Technical details

N-Channel 800V 4A 36W Through Hole TO-220F

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