UTC · FETs & Power MOSFETs · MPN 4N65L-TA3-T
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| Drain to Source Voltage | 650V |
|---|---|
| Current - Continuous Drain(Id) | 4A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 106W |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
650V 4A 4V 106W 2.5Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS