UTC 4N65L-Q-TM3-T

UTC · FETs & Power MOSFETs · MPN 4N65L-Q-TM3-T

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Specifications

Drain to Source Voltage650V
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
RDS(on)2.5Ω@10V
Number1 N-channel

Technical details

650V 4A 4V 50W 2.5Ω@10V 1 N-channel TO-251(IPAK) Single FETs, MOSFETs RoHS

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