UTC 4N65KL-TN3-R

UTC · FETs & Power MOSFETs · MPN 4N65KL-TN3-R

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)430pF
TypeN-Channel

Technical details

N-Channel 650V 4A 50W Surface Mount TO-252

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