UTC 4N65KL-TF3-T

UTC · FETs & Power MOSFETs · MPN 4N65KL-TF3-T

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Specifications

Configuration-
Gate Charge(Qg)20nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)1.77Ω@10V
Number1 N-channel
Input Capacitance(Ciss)750pF

Technical details

N-Channel 650V 4A 34W Through Hole TO-220F

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