UTC · FETs & Power MOSFETs · MPN 4N65KL-TF1-T
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 490pF |
650V 4A 4V 36W 2.5Ω@10V 1 N-channel TO-220F1 Single FETs, MOSFETs RoHS